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包装/箱
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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安装类型
Surface Mount
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工作温度
-55°C ~ 175°C (TJ)
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Technology
SiC (Silicon Carbide Junction Transistor)
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FET Type
N-Channel
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Current - Continuous Drain (Id) @ 25°C
30A (Tc)
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Rds On (Max) @ Id, Vgs
87mOhm @ 15A, 18V
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Power Dissipation (Max)
223W (Tc)
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Vgs(th)(最大值)@Id
4.2V @ 1mA
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供应商设备包
H2PAK-7
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年级
Automotive
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驱动电压(最大导通电阻、最小导通电阻)
15V, 18V
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Vgs(最大)
+18V, -5V
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漏源电压 (Vdss)
1200 V
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栅极电荷 (Qg)(最大值)@Vgs
37 nC @ 18 V
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输入电容 (Ciss)(最大值)@Vds
900 pF @ 850 V
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资质
AEC-Q101