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安装类型
Chassis Mount
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包装/箱
Module
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工作温度
-40°C ~ 175°C (TJ)
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Technology
Silicon Carbide (SiC)
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配置
2 N-Channel (Half Bridge)
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Drain to Source Voltage (Vdss)
1200V (1.2kV)
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供应商设备包
AG-62MMHB
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Current - Continuous Drain (Id) @ 25°C
190A (Tc)
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Rds On (Max) @ Id, Vgs
4.44mOhm @ 280A, 18V
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Vgs(th)(最大值)@Id
5.1V @ 112mA
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Gate Charge (Qg) (Max) @ Vgs
800nC @ 18V
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Input Capacitance (Ciss) (Max) @ Vds
24200pF @ 800V