TP65H070G4QS-TR

TP65H070G4QS-TR

Part Number: TP65H070G4QS-TR

Product Classification: Single FETs, MOSFETs

Manufacturer: Transphorm

Description: 650 V 29 A GAN FET

Packaging: Tape & Reel (TR)

ROHS Status: Yes

Currency: USD

PDF: Documents

Quantity

Specification

Mounting Type Surface Mount
FET Type N-Channel
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 650 V
Technology GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id 4.8V @ 700µA
Package / Case 8-PowerSFN
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Supplier Device Package TOLL
Power Dissipation (Max) 96W (Tc)
Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 10 V