S2M0120120J
Part Number:
S2M0120120J
Product Classification:
Single FETs, MOSFETs
Manufacturer:
SMC Diode Solutions
Description:
MOSFET SILICON CARBIDE SIC 1200V
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Surface Mount
- FET Type N-Channel
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss) 1200 V
- Current - Continuous Drain (Id) @ 25°C 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Rds On (Max) @ Id, Vgs 150mOhm @ 13.3A, 20V
- Vgs(th) (Max) @ Id 4V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs 29.6 nC @ 20 V
- Vgs (Max) +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds 652 pF @ 1000 V
- Supplier Device Package TO-263-7
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Power Dissipation (Max) 153W (Tc)