RN1710JE(TE85L,F)
Part Number:
RN1710JE(TE85L,F)
Product Classification:
Bipolar Transistor Arrays, Pre-Biased
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
Packaging:
Tape & Reel (TR)
ROHS Status:
No
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Surface Mount
- Current - Collector Cutoff (Max) 100nA (ICBO)
- Frequency - Transition 250MHz
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
- Current - Collector (Ic) (Max) 100mA
- Power - Max 100mW
- Resistor - Base (R1) 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
- Package / Case SOT-553
- Supplier Device Package ESV
- Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)