NXH004P120M3F2PTNG
Part Number:
NXH004P120M3F2PTNG
Product Classification:
FET, MOSFET Arrays
Manufacturer:
Sanyo Semiconductor/onsemi
Description:
SILICON CARBIDE (SIC) MODULE EL
Packaging:
Tray
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Chassis Mount
- Package / Case Module
- Operating Temperature -40°C ~ 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Configuration 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Supplier Device Package 36-PIM (56.7x62.8)
- Rds On (Max) @ Id, Vgs 5.5mOhm @ 200A, 18V
- Vgs(th) (Max) @ Id 4.4V @ 120mA
- Gate Charge (Qg) (Max) @ Vgs 876nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds 16410pF @ 800V
- Current - Continuous Drain (Id) @ 25°C 338A (Tj)
- Power - Max 1.1kW (Tj)