NVBG1000N170M1
Part Number:
NVBG1000N170M1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Sanyo Semiconductor/onsemi
Description:
SIC 1700V MOS 1O IN TO263-7L
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Surface Mount
- Grade Automotive
- FET Type N-Channel
- Operating Temperature -55°C ~ 175°C (TJ)
- Qualification AEC-Q101
- Technology SiC (Silicon Carbide Junction Transistor)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Power Dissipation (Max) 51W (Tc)
- Supplier Device Package D2PAK-7
- Drain to Source Voltage (Vdss) 1700 V
- Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 14 nC @ 20 V
- Vgs (Max) +25V, -15V
- Rds On (Max) @ Id, Vgs 1.43Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id 4.3V @ 640µA
- Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 1000 V