IXFN55N120SK
Part Number:
IXFN55N120SK
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Littelfuse / IXYS RF
Description:
SIC AND MULTICHIP DISCRETE
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Chassis Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- FET Type N-Channel
- Package / Case SOT-227-4, miniBLOC
- Supplier Device Package SOT-227B
- Technology SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss) 1200 V
- Current - Continuous Drain (Id) @ 25°C 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Vgs (Max) +15V, -4V
- Rds On (Max) @ Id, Vgs 42mOhm @ 40A, 15V
- Vgs(th) (Max) @ Id 3.6V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs 107 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 3360 pF @ 1000 V