IMZA75R027M1HXKSA1
Part Number:
IMZA75R027M1HXKSA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
IR (Infineon Technologies)
Description:
SILICON CARBIDE MOSFET
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- FET Type N-Channel
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- Package / Case TO-247-4
- Supplier Device Package PG-TO247-4
- Drain to Source Voltage (Vdss) 750 V
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Vgs (Max) +23V, -5V
- Power Dissipation (Max) 234W (Tc)
- Current - Continuous Drain (Id) @ 25°C 60A (Tj)
- Gate Charge (Qg) (Max) @ Vgs 49 nC @ 18 V
- Rds On (Max) @ Id, Vgs 25mOhm @ 24.5A, 20V
- Vgs(th) (Max) @ Id 5.6V @ 8.8mA
- Input Capacitance (Ciss) (Max) @ Vds 1668 pF @ 500 V