IMW65R007M2HXKSA1
Part Number:
IMW65R007M2HXKSA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
IR (Infineon Technologies)
Description:
SILICON CARBIDE MOSFET
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- FET Type N-Channel
- Operating Temperature -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss) 650 V
- Package / Case TO-247-3
- Technology SiC (Silicon Carbide Junction Transistor)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Supplier Device Package PG-TO247-3-U06
- Power Dissipation (Max) 625W (Tc)
- Current - Continuous Drain (Id) @ 25°C 171A (Tc)
- Vgs (Max) +23V, -7V
- Gate Charge (Qg) (Max) @ Vgs 179 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 6359 pF @ 400 V
- Rds On (Max) @ Id, Vgs 6.1mOhm @ 146.3A, 20V
- Vgs(th) (Max) @ Id 5.6V @ 29.7mA