BSB056N10NN3GXUMA2
Part Number:
BSB056N10NN3GXUMA2
Product Classification:
Single FETs, MOSFETs
Manufacturer:
IR (Infineon Technologies)
Description:
TRENCH >=100V
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
- Vgs(th) (Max) @ Id 3.5V @ 100µA
- Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
- Current - Continuous Drain (Id) @ 25°C 9A (Ta), 83A (Tc)
- Rds On (Max) @ Id, Vgs 5.6mOhm @ 30A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 50 V
- Supplier Device Package MG-WDSON-5-3
- Package / Case DirectFET™ Isometric MN