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IPD70N10S312ATMA2
Part number：
IPD70N10S312ATMA2
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
IR (Infineon Technologies)
describe：
MOSFET_(75V 120V(
package：
Tape & Reel (TR)
ROHS status：
Yes
currency：
USD
PDF:
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inventory 1600
minimum : 0
quantity
unit price
price
2500
1.1
2750
5000
1.05
5250
specifications
  • Package / Case
    TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Technology
    MOSFET (Metal Oxide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    70A (Tc)
  • Rds On (Max) @ Id, Vgs
    11.1mOhm @ 70A, 10V
  • Power Dissipation (Max)
    125W (Tc)
  • Vgs(th) (Max) @ Id
    4V @ 83µA
  • Supplier Device Package
    PG-TO252-3-11
  • Grade
    Automotive
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain to Source Voltage (Vdss)
    100 V
  • Gate Charge (Qg) (Max) @ Vgs
    65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds
    4355 pF @ 25 V
  • Qualification
    AEC-Q101
  • 3008513972/3008513927/3008513975
  • 13342993690

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