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IPB70N10S3L12ATMA2
Part number：
IPB70N10S3L12ATMA2
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
IR (Infineon Technologies)
describe：
MOSFET_(75V 120V(
package：
ROHS status：
Yes
currency：
USD
PDF:
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inventory 1600
minimum : 0
quantity
unit price
price
1
1.26
1.26
specifications
  • Package / Case
    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Technology
    MOSFET (Metal Oxide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    70A (Tc)
  • Rds On (Max) @ Id, Vgs
    12.1mOhm @ 70A, 10V
  • Power Dissipation (Max)
    125W (Tc)
  • Vgs(th) (Max) @ Id
    2.4V @ 83µA
  • Supplier Device Package
    PG-TO263-3-2
  • Grade
    Automotive
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Vgs (Max)
    ±20V
  • Drain to Source Voltage (Vdss)
    100 V
  • Gate Charge (Qg) (Max) @ Vgs
    80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds
    5570 pF @ 25 V
  • Qualification
    AEC-Q101
  • 3008513972/3008513927/3008513975
  • 13342993690

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