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IMW65R007M2HXKSA1
Part number：
IMW65R007M2HXKSA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
IR (Infineon Technologies)
describe：
SILICON CARBIDE MOSFET
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1600
minimum : 0
quantity
unit price
price
1
41.49
41.49
10
38.71
387.1
30
37.09
1112.7
120
33.61
4033.2
270
32.45
8761.5
specifications
  • Package / Case
    TO-247-3
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    171A (Tc)
  • Rds On (Max) @ Id, Vgs
    6.1mOhm @ 146.3A, 20V
  • Power Dissipation (Max)
    625W (Tc)
  • Vgs(th) (Max) @ Id
    5.6V @ 29.7mA
  • Supplier Device Package
    PG-TO247-3-U06
  • Drive Voltage (Max Rds On, Min Rds On)
    15V, 20V
  • Vgs (Max)
    +23V, -7V
  • Drain to Source Voltage (Vdss)
    650 V
  • Gate Charge (Qg) (Max) @ Vgs
    179 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds
    6359 pF @ 400 V
  • 3008513972/3008513927/3008513975
  • 13342993690

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