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CGD65B200S2-T13
Part number：
CGD65B200S2-T13
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Cambridge GaN Devices
describe：
650V GAN HEMT, 200MOHM, DFN5X6.
package：
Tape & Reel (TR)
ROHS status：
Yes
currency：
USD
PDF:
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inventory 5955
minimum : 0
quantity
unit price
price
5000
2.13
10650
specifications
  • Package / Case
    8-PowerVDFN
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Technology
    GaNFET (Gallium Nitride)
  • Current - Continuous Drain (Id) @ 25°C
    8.5A (Tc)
  • Rds On (Max) @ Id, Vgs
    280mOhm @ 600mA, 12V
  • FET Feature
    Current Sensing
  • Vgs(th) (Max) @ Id
    4.2V @ 2.75mA
  • Supplier Device Package
    8-DFN (5x6)
  • Drive Voltage (Max Rds On, Min Rds On)
    9V, 20V
  • Vgs (Max)
    +20V, -1V
  • Drain to Source Voltage (Vdss)
    650 V
  • Gate Charge (Qg) (Max) @ Vgs
    1.4 nC @ 12 V
  • 3008513972/3008513927/3008513975
  • 13342993690

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