SICW028N120A4-BP
Part Number:
SICW028N120A4-BP
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Micro Commercial Components (MCC)
Description:
SCHOTTKY DIODES
Packaging:
-
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- FET Type N-Channel
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss) 1200 V
- Supplier Device Package TO-247-4
- Package / Case TO-247-4
- Power Dissipation (Max) 375W (Tc)
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 16V, 20V
- Vgs (Max) +22V, -5V
- Rds On (Max) @ Id, Vgs 30mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id 3V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs 168 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 3570 pF @ 1000 V