NXH003P120M3F2PTNG
Part Number:
NXH003P120M3F2PTNG
Product Classification:
FET, MOSFET Arrays
Manufacturer:
Sanyo Semiconductor/onsemi
Description:
SILICON CARBIDE (SIC) MODULE EL
Packaging:
Tray
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Chassis Mount
- Package / Case Module
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology Silicon Carbide (SiC)
- Configuration 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Rds On (Max) @ Id, Vgs 5mOhm @ 200A, 18V
- Vgs(th) (Max) @ Id 4.4V @ 160mA
- Input Capacitance (Ciss) (Max) @ Vds 20889pF @ 800V
- Supplier Device Package 36-PIM (56.7x62.8)
- Current - Continuous Drain (Id) @ 25°C 435A (Tj)
- Gate Charge (Qg) (Max) @ Vgs 1200nC @ 20V
- Power - Max 1.48kW (Tj)