IPP083N10N5XKSA1
Part Number:
IPP083N10N5XKSA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
IR (Infineon Technologies)
Description:
TRENCH >=100V
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 175°C (TJ)
- Supplier Device Package PG-TO220-3-1
- Power Dissipation (Max) 100W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 49µA
- Current - Continuous Drain (Id) @ 25°C 73A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 2730 pF @ 50 V
- Rds On (Max) @ Id, Vgs 8.3mOhm @ 73A, 10V