IMDQ75R040M1HXUMA1
Part Number:
IMDQ75R040M1HXUMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
IR (Infineon Technologies)
Description:
SILICON CARBIDE MOSFET
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Surface Mount
- FET Type N-Channel
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- Current - Continuous Drain (Id) @ 25°C 47A (Tc)
- Power Dissipation (Max) 211W (Tc)
- Drain to Source Voltage (Vdss) 750 V
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Vgs (Max) +23V, -5V
- Supplier Device Package PG-HDSOP-22-1
- Package / Case 22-PowerBSOP Module
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 18 V
- Rds On (Max) @ Id, Vgs 37mOhm @ 16.6A, 20V
- Vgs(th) (Max) @ Id 5.6V @ 6mA
- Input Capacitance (Ciss) (Max) @ Vds 1135 pF @ 500 V