IMDQ75R016M1HXUMA1
Part Number:
IMDQ75R016M1HXUMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
IR (Infineon Technologies)
Description:
SILICON CARBIDE MOSFET
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Surface Mount
- FET Type N-Channel
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss) 750 V
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Vgs(th) (Max) @ Id 5.6V @ 14.9mA
- Vgs (Max) +23V, -5V
- Input Capacitance (Ciss) (Max) @ Vds 2869 pF @ 500 V
- Current - Continuous Drain (Id) @ 25°C 98A (Tc)
- Supplier Device Package PG-HDSOP-22-1
- Package / Case 22-PowerBSOP Module
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 18 V
- Power Dissipation (Max) 384W (Tc)
- Rds On (Max) @ Id, Vgs 15mOhm @ 41.5A, 20A