IMBG65R015M2HXTMA1
Part Number:
IMBG65R015M2HXTMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
IR (Infineon Technologies)
Description:
SILICON CARBIDE MOSFET
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Surface Mount
- FET Type N-Channel
- Operating Temperature -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss) 650 V
- Technology SiCFET (Silicon Carbide)
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Power Dissipation (Max) 416W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Supplier Device Package PG-TO263-7-12
- Current - Continuous Drain (Id) @ 25°C 115A (Tc)
- Vgs (Max) +23V, -7V
- Vgs(th) (Max) @ Id 5.6V @ 13mA
- Gate Charge (Qg) (Max) @ Vgs 79 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2792 pF @ 400 V
- Rds On (Max) @ Id, Vgs 18mOhm @ 64.2A, 18V