HN3C10FUTE85LF
Part Number:
HN3C10FUTE85LF
Product Classification:
Bipolar RF Transistors
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
RF TRANS 2 NPN 12V 7GHZ US6
Packaging:
-
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Surface Mount
- Package / Case 6-TSSOP, SC-88, SOT-363
- Power - Max 200mW
- Voltage - Collector Emitter Breakdown (Max) 12V
- Transistor Type 2 NPN (Dual)
- Current - Collector (Ic) (Max) 80mA
- Supplier Device Package US6
- Gain 11.5dB
- Frequency - Transition 7GHz
- Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V